Synthesis of SiC Microstructures in Si Technology by High Dose Carbon Implantation: Etch‐Stop Properties-Reference-Cited by-同舟云学术

Synthesis of SiC Microstructures in Si Technology by High Dose Carbon Implantation: Etch‐Stop Properties

Published:1997-06-01 Issue:6 Volume:144 Page:2211-2215
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Serre C.¹²³,Pérez‐Rodríguez A.¹²³,Romano‐Rodríguez A.¹²³,Calvo‐Barrio L.¹²³,Morante J. R.¹²³,Esteve J.¹²³,Acero M. C.¹²³,Skorupa W.¹²³,Kögler R.¹²³

Affiliation:

1. EME, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, E‐08028 Barcelona, Spain

2. Centre Nacional de Microelectrònica CNM‐CSIC, Campus UAB, E‐08193 Bellaterra, Spain

3. Forschungszentrum Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung, D‐01314 Dresden, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837767/pdf

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Harsh Environment Materials;Reference Module in Materials Science and Materials Engineering;2016

2. Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles;Nano Letters;2014-12-22

3. Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing;Thin Solid Films;2012-12

4. Effects of Thermal Annealing on the Formation of Buried β-SiC by Ion Implantation;Journal of Electronic Materials;2011-06-30

5. Harsh Environment Materials;Comprehensive Microsystems;2008