Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
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4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
5. Silicon di-interstitial in ion-implanted silicon
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