Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Transient Phosphorus Diffusion Below the Amorphization Threshold
3. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
4. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D;ESSDERC 2007 - 37th European Solid State Device Research Conference;2007
2. Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers.;MRS Proceedings;2004
3. Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
4. Status and open problems in modeling of as-implanted damage in silicon;Materials Science in Semiconductor Processing;2003-02
5. Modeling of TED of boron in the underlying silicon layer due to boron implantation;ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)
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