Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation-Reference-Cited by-同舟云学术

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Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Published:2003-07 Issue:3 Volume:207 Page:301-307
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Cheng X.Q.,Wang R.S.,Tang X.J.,Liu B.X.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Thin Films Interfaces and Reaction;Tu,1978

2. Laser‐induced reactions of platinum and other metal films with silicon

3. Laser annealing for solid‐phase thin‐film reactions

4. Metal Silicon Reactions Induced by CW Scanned Laser and Electron Beams

5. High current ion source

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Swift heavy ion induced effects at Mo/Si interface and silicide formation;Surface and Interface Analysis;2009-09

2. Swift heavy ion beam mixing in Mo/Si system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03

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