Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Hydrogenation of transistors fabricated in polycrystalline-silicon films
2. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
3. Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin‐film transistor structures
4. Hydrogen Passivation of Polysilicon Thin-Film Transistors by Electron Cyclotron Resonance Plasma
5. Hydrogenation of polycrystalline silicon thin film transistors by plasma ion implantation
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1. Plasma ion implantation to thin polymer foils;physica status solidi (a);2008-04
2. Plasma characteristics in pulse-mode plasmas using time-delayed, time-resolved Langmuir probe diagnoses;Surface and Coatings Technology;2007-04
3. Effects of hydrogen on poly- and nano-crystallization of a-Si:H prepared by RF magnetron sputtering;Journal of Crystal Growth;2006-10
4. Time-delayed, time-resolved Langmuir probe diagnostics of pulsed plasmas;Applied Physics Letters;2005-12-12
5. Plasma-Sheath Expansion During Plasma Immersion Ion Implantation of Insulating Materials;IEEE Transactions on Plasma Science;2004-04
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