Study of resistivity and majority carrier concentration of silicon detectors damaged by neutron irradiation up to 1016 n/cm2
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors
2. Fast neutron damage in silicon detectors
3. Silicon detector developments for calorimetry: Technology and radiation damage
4. Study of current-voltage characteristics of irradiated silicon detectors
5. Effects of fast neutron radiation on the electrical properties of silicon detectors
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3. HALL COEFFICIENT DEPENDENCE ON RESISTIVITY DOWN TO CRYOGENIC TEMPERATURES IN SILICON SAMPLES IRRADIATED WITH NEUTRONS AND 12C-IONS;Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications;2010-04
4. Influence of reactor neutrons irradiation on electrical, optical and structural properties of SnO2 film prepared by sol–gel method;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2009-11
5. DETERMINATION OF HALL COEFFICIENT FOR NEUTRON IRRADIATED SAMPLES DOWN TO CRYOGENIC TEMPERATURES AND ITS DEPENDANCE ON RESISTIVITY AT ROOM TEMPERATURE;Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications;2008-06
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