Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors-Reference-Cited by-同舟云学术

Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors

Published:1989-07 Issue:1-2 Volume:279 Page:277-280
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Borchi E.,Bertrand C.,Leroy C.,Bruzzi M.,Furetta C.,Paludetto R.,Rancoita P.G.,Vismara L.,Giubellino P.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. these Proceedings Int. Conf. on Advanced Technology and Particle Physics;Borchi,1989

2. these Proceedings Int. Conf. on Advanced Technology and Particle Physics;Kraner,1989

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