Chemical mechanical planarization of copper using abrasive-free solutions of oxalic acid and hydrogen peroxide
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference44 articles.
1. Chemical-Mechanical Polishing 2001: Advances and Future Challenges,2001
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5. Experimental and Numerical Analysis of An Inhibitor-Containing Slurry for Copper Chemical Mechanical Planarization
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2. Synergistic Effect of Complexing Agent TAD and Corrosion Inhibitor PZ on BTA Removal in Copper Post-CMP Cleaning;ECS Journal of Solid State Science and Technology;2023-08-01
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