Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition-Reference-Cited by-同舟云学术

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Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

Published:2012-04 Issue:2-3 Volume:133 Page:700-705
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Ou Sin-Liang,Wuu Dong-Sing,Fu Yu-Chuan,Liu Shu-Ping,Horng Ray-Hua,Liu Lei,Feng Zhe-Chuan

Funder

National Science Council

Ministry of Economic Affairs

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Oxygen vacancies and donor impurities in β-Ga2O3

2. Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

3. Synthesis and characterization of gallium oxide nanowires via a hydrothermal method

4. Synthesis and properties of epitaxial electronic oxide thin-film materials

5. High Temperature Oxygen Sensor Using a Pt–Ga2O3–Pt Sandwich Structure

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5. Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors;IEEE Sensors Journal;2024-05-01

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