Barrier capability of Zr–N films with titanium addition against copper diffusion
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Formation of CrO and CrNO films serving as Cu oxidation resistant layers and their N2 pre-sintering effect
2. Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+–p junction diodes
3. Electrochemical Cu Nanoparticle Deposition on TaSiN Diffusion Barrier Films
4. Atomic Layer Deposition of Molybdenum Nitride Thin Films for Cu Metallizations
5. Comparative study of HfNx and Hf–Ge–N copper diffusion barriers on Ge
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1. Deposition of Ti-Zr-O-N films by reactive magnetron sputtering of Zr target with Ti ribbons;Surface and Coatings Technology;2021-03
2. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization;Applied Surface Science;2017-02
3. Thermal stability of RuZr alloy thin films as the diffusion barrier in Cu metallization;Journal of Alloys and Compounds;2014-03
4. Improved diffusion barrier performance of Ru/TaN bilayer by N effusion in TaN underlayer;Materials Chemistry and Physics;2012-08
5. Synthesis of WN(NMe 2 ) 3 as a Precursor for the Deposition of WN x Nanospheres;European Journal of Inorganic Chemistry;2012-07-13
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