An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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An insight into the epitaxial nanostructures of NiO and CeO2 thin film dielectrics for AlGaN/GaN heterostructures

Published:2015-07 Issue: Volume:162 Page:461-468
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Lo Nigro Raffaella,Fisichella Gabriele,Battiato Sergio,Greco Giuseppe,Fiorenza Patrick,Roccaforte Fabrizio,Malandrino Graziella

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference44 articles.

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2. Ultra thin oxide films for advanced gate dielectrics applications: recent progress and future challenges;Gusev,2000

3. Photocurrent measurements for oxide charge characterization of high-κ dielectric metal oxide semiconductor capacitors

4. Compatibility Challenges for High-ĸ Materials Integration into CMOS Technology

5. V.V. Afanas'ev, M. Bassler, G. Pensl, M.J. Schulz, Phys. Status Solidi A 162(21997) 321–337.

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