Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications
Author:
Funder
Economic Development Board-Joint Industry Programme
Bera Lakshmi Kanta
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference45 articles.
1. A 70 nm 16 Gb 16-Level-Cell NAND flash Memory
2. A novel SONOS-type flash device with stacked charge trapping layer
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5. TiO2-based MIM capacitors featuring suppressed leakage current by embedding Ge nanocrystals
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