An outstanding innovation in LP-MOVPE: use of nitrogen as the carrier gas-Reference-Cited by-同舟云学术

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An outstanding innovation in LP-MOVPE: use of nitrogen as the carrier gas

Published:1995-06 Issue:3 Volume:8 Page:34-39
ISSN:0961-1290
Container-title:III-Vs Review
language:en
Short-container-title:III-Vs Review

Author:

Hardtdegen H.,Giannoules P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference7 articles.

1. OSK Semiconductor Seminar;Briesacher,1992

2. Gas Purification and Measurement at the PPT Level

3. MOVPE growth of GaAs using a N2 carrier;Hardtdegen;J. Crystal Growth,1992

4. Suitability of N2 as carrier in LP-MOVPE of (AlGa)AsGaAs;Hardtdegen,1994

5. (AlGa)As grown by low pressure metallorganic vapour phase epitaxy using a N2 carrier;Hollfelder;J. Electron. Mater.,1994

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Core–shell GaN/AlGaN nanowires grown by selective area epitaxy;Nanoscale Horizons;2023

2. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

3. From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE;Journal of Crystal Growth;2013-05

4. InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources;Journal of Crystal Growth;2000-12

5. The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources;Materials Science and Engineering: B;1997-02

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