Author:
Hu Shengdong,Chen Yinhui,Jin Jingjing,Zhou Jianlin,Zhou Feng,Chen Zongze,Huang Ye,Luo Jun,Wang Jian’an
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities, China
China Postdoctoral Science Foundation
National Training Program of Innovation and Entrepreneurship for Undergraduates
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. A new device for smart power integrated circuits: the trench later DMOSFET;Zitouni;Proc. Int. Semicond. Conf.,1998
2. A new concept for the lateral DMOS transistor for smart power IC’s;Zitouni;Proc. Int. Symp. Power Semicond. Dev. Ics,1999
3. A trench lateral power MOSFET using self-aligned trench bottom contact holes;Fujishima;IEDM Tech D,1997
4. A high-density low on-resistance trench lateral power MOSFET;Fujishima;IEEE Trans. Electron Dev.,2002
5. 250 V integrable silicon lateral trench power MOSFETs with superior specific on-resistance;Varadarajan;Proc. Int. Symp. Power Semicond. Dev. Ics,2007
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献