Performance assessment of a novel 4H–SiC junctionless planar power MOSFET towards improving electrical properties
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Elsevier BV
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1. A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability;IEEE Transactions on Device and Materials Reliability;2023-12
2. A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25
3. A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics;Microelectronic Engineering;2023-05
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