Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors
2. T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers
3. High power and high breakdown δ-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
4. The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's
5. Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels;Science of Advanced Materials;2018-05-01
2. Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors;ECS Journal of Solid State Science and Technology;2018
3. Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure;Crystals;2017-05-25
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