Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE

Published:2013-12 Issue: Volume:64 Page:367-374
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mohd Yusoff M.Z.,Mahyuddin A.,Hassan Z.,Abu Hassan H.,Abdullah M.J.

Funder

Research University

Universiti Sains Malaysia

Universiti Teknologi MARA

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Effect of AlN buffer thickness on GaN epilayer grown on Si(111);Wei;Mater. Sci. Semiconduct. Proc.,2011

2. GaN-based modulation doped FETs and UV detectors;Morkoc;Solid State Electron.,2002

3. Study on the initial stages of heteroepitaxial growth of hexagonal GaN on sapphire by plasma assisted MBE;Balakrishnan;J. Crystal Growth,1998

4. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si (111);Sanchez-Garcia;J. Crystal Growth,1998

5. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy;Tarsa;J. Appl. Phys.,1997

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE);Results in Physics;2019-03

2. Influence of temperature and Al/N ratio on structural, chemical & electronic properties of epitaxial AlN films grown via PAMBE;Applied Surface Science;2018-10

3. Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER);Superlattices and Microstructures;2018-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3