Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes-Reference-Cited by-同舟云学术

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Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes

Published:2018-01 Issue: Volume:113 Page:684-689
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Li Panpan,Bonef Bastien,Khoury Michel,Lheureux Guillaume,Li Hongjian,Kang Junjie,Nakamura Shuji,DenBaars Steven P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference33 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Solid-State Light Sources Getting Smart

3. White light emitting diodes with super-high luminous efficacy

4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

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1. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer;Chinese Physics B;2022-01-01

2. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures;Superlattices and Microstructures;2021-12

3. Unlocking the origin of compositional fluctuations in InGaN light emitting diodes;Physical Review Materials;2021-02-22

4. A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes;Journal of Applied Physics;2020-12-21

5. Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes;Journal of Applied Physics;2019-09-28

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