Author:
Li Rui,Xu Mingsheng,Wang Chengxin,Qu Shangda,Shi Kaiju,Li Changfu,Xu Xiangang,Ji Ziwu
Funder
National Natural Science Foundation of China
Major Scientific and Technological Innovation Project of Shandong Province
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference32 articles.
1. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer;Li;Appl. Phys. Lett.,2013
2. Piezo-phototronic effect in InGaN/GaN semi-floating micro-disk LED arrays;Liu;Nano Energy,2020
3. Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis;Kim;Sci. Rep.,2017
4. Strain induced deep electronic states around threading dislocations in GaN;Lymperakis;Phys. Rev. Lett.,2004
5. Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes;Li;Superlattice. Microst.,2018
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献