Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
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3. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y
4. Vertical InGaAs Channel Metal–Insulator–Semiconductor Field Effect Transistor with High Current Density
5. Planar-junction, top-illuminated GainAs/InP pin photodiode with bandwidth of 25 GHz
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1. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications;Optics & Laser Technology;2022-04
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3. Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C;AIP Advances;2017-06
4. Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure;Crystals;2017-05-25
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