Author:
Durga Jayakumar G.,Srinivasan R.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Modeling and analysis of gate-all-around silicon nanowire FET;Chen;Microelectron. Reliab.,2014
2. Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top–down approach;Huang;Front. Phys. China,2010
3. Daniel Tekleab, Hung H. Tran, Jeffrey W. Sleight, Dureseti Chidambarrao, Silicon nanotube MOSFET, U.S.Patent 20120217468 A1 (Aug 30, 2012).
4. Device performance of silicon nanotube field effect transistor;Tekleab;IEEE Electron Device Lett.,2014
5. Are nanotube architectures advantageous than nanowire architectures for field effect transistor applications?;Fahad;Sci. Rep.,2012
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