Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach-Reference-Cited by-同舟云学术

Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach

Published:2010-09-22 Issue:4 Volume:5 Page:414-421
ISSN:1673-3487
Container-title:Frontiers of Physics in China
language:en
Short-container-title:Front. Phys. China

Author:

Huang Ru,Wang Run-sheng

Publisher

Springer Science and Business Media LLC

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1007/s11467-010-0110-y.pdf

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