Study of 6T SRAM cell using High- K gate dielectric based junctionless silicon nanotube FET

Author:

Tayal ShubhamORCID,Nandi Ashutosh

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. D. Tekleab, H. H. Tran and J. W. Slight, Silicon Nanotube MOSFET, U.S. Patent 0217468, Aug. 2012.

2. Device performance of silicon nanotube field effect transistor;Tekleab;IEEE Elect. Device Lett.,2014

3. Nanotube junctionless FET: proposal, design, and investigation;Sahay;IEEE Trans. Electron Dev.,2017

4. Effect of eccentricity on junction and junctionless based silicon nanowire and silicon nanotube FETs;Scarlet;Superlattice. Microstruct.,2017

5. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits;Fahad;Nano Lett.,2011

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