Effect of eccentricity on junction and junctionless based silicon nanowire and silicon nanotube FETs-Reference-Cited by-同舟云学术

Effect of eccentricity on junction and junctionless based silicon nanowire and silicon nanotube FETs

Published:2017-07 Issue: Volume:107 Page:178-188
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Scarlet S. Priscilla,Ambika R.,Srinivasan R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

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4. Transient analysis & performance estimation of gate inside junctionless transistor (GI-JLT);Singh;Int. J. Electr. Comput. Electron. Commun. Eng.,2014

5. Finfets and Other Multigate Transistors;Colinge,2007

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