1. Multiple-gate SOI MOSFETs;Colinge;Solid-State Electron,2004
2. Multi-gate devices for the 32nm technology node and beyonds;Collaert;Solid-State Electron,2008
3. Doyle B, Boyanov B, Datta S, Doczy M, Hareland S, Jin B, et al. Tri-gate fully-depleted CMOS transistors: fabrication, design and layout. In: Proc symp VLSI technol dig tech papers; 2003. p. 133–4.
4. Lee S-Y, Yoon E-J, Shin D-S, Kim S-M, Suk S-D, Kim M-S, et al. Sub-25nm single-metal gate CMOS multi-bridge-channel MOSFET (MBCFET) for high performance and low power application. In: Proc symp VLSI technol dig tech papers; 2005. p. 154–5.
5. Dupré C, Hubert A, Bécu S, Jublot M, Maffini-Alvaro V, Vizioz C, et al. 15nm-diameter 3D stacked nanowires with independent gates operation: ϕFET. In: Proceedings of the IEDM; 2008.