Optimization of two-dimensional electron gases and – characteristics for AlGaN/GaN HEMT devices
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Growth and applications of Group III-nitrides
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4. The Polarity of GaN: a Critical Review
5. Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs
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2. Double aperture double-gate vertical high-electron-mobility transistor;Journal of Computational Electronics;2016-12-15
3. Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer;Journal of Computational Electronics;2016-10-07
4. Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications;Superlattices and Microstructures;2015-09
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