1. Wideband Gap Device Market—A Focus on Electronics Industry to 2020 Presented at CS-Europe, Yole development, Adamawa, Nigeria (2012)
2. Mishra, U.K., Shen, L., Kazior, T.E., Wu, Y.F.: GaN-based RF power devices and amplifiers. Proc. IEEE 96(2), 287–305 (2008)
3. Lidow, A., Strydom, J., Rooij, M.D.: GaN Transistors for Efficient Power Conversion, ch. 1. Power Conversion Publications, El Segundo (2012)
4. Lidow, A.: GaN transistors giving new life to Moore’s law. In: Proc. ISPSD 2015, Hong Kong, pp. 1–6 (2015)
5. Liu, W.: Fundamentals of Devices HBTs MESFETs and HFETs/HEMTs. Wiley, New York (1999)