Strain‐induced effects in (111)‐oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359219
Reference15 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Strain-generated electric fields in [111] growth axis strained-layer superlattices
3. Theory of semiconductor superlattice electronic structure
4. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
5. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
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