SEM observation of p-n junction in semiconductors using fountain secondary electron detector
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Impurity measurements in silicon with D-SIMS and atom probe tomography
2. Quantitative analysis of one-dimensional dopant profile by electron holography
3. Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy
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5. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
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