Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors-Reference-Cited by-同舟云学术

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Atomic layer deposition deposited high dielectric constant (κ) ZrAlOx gate insulator enabling high performance ZnSnO thin film transistors

Published:2017-09 Issue: Volume:109 Page:852-859
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Huang Chuan-Xin,Li Jun,Zhong De-Yao,Zhao Cheng-Yu,Zhu Wen-Qing,Zhang Jian-Hua,Jiang Xue-Yin,Zhang Zhi-Lin

Funder

Shanghai Science and Technology Commission

Natural Science Foundation of China

Program of Shanghai Subject Chief Scientist

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

2. Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

3. Transparent thin-film transistors with zinc indium oxide channel layer

4. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sequential manufacturing via intra-additive hybrid materials approach for fully roll-to-roll processed flexible organic thin film transistors;Journal of Manufacturing Processes;2021-12

2. Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor;International Journal of Energy Research;2020-10-10

3. Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2020-07-23

4. Water-Derived All-Oxide Thin-Film Transistors With ZrAlO x Gate Dielectrics and Exploration in Digital Circuits;IEEE Transactions on Electron Devices;2019-10

5. Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor;Electronic Materials Letters;2018-06-20

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