Fast recovery SOI PiN diode with multiple trenches-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Fast recovery SOI PiN diode with multiple trenches

Published:2017-11 Issue: Volume:111 Page:405-413
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Long^ORCID,Zhu Jing,Zhao Minna,Ding Desheng,Chen Jian,Sun Weifeng

Funder

Jiangsu Province

National Nature Science Foundation of China

Natural Science Foundation of Jiangsu Province

science-technology program of Jiangsu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. 600V single chip inverter IC with new SOI technology;Hara,2014

2. Improvement in lateral IGBT design for 500 V 3A one chip inverter ICs;Nakagawa,1999

3. Novel snapback-free reverse-conducting SOI-LIGBT with dual Embedded diodes;Zhang;IEEE Trans. Electron Dev.,2017

4. Electrical characteristic study of an SOI-LIGBT with segmented trenches in the anode region;Zhu;IEEE Trans. Electron Dev.,2016

5. A novel silicon-on-insulator lateral insulated gate bipolar transistor with dual trenches for three-phase single chip inverter ICs;Sun;IEEE Electron Dev. Lett.,2015

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 41% Reduction In Power Stage Area On Silicon-On-Insulator Bipolar-CMOS-DMOS-IGBT Platform With Newly Developed Multiple Deep-Oxide Trench Technology;2022 International Electron Devices Meeting (IEDM);2022-12-03

2. Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT;IEEE Transactions on Electron Devices;2022-10

3. Changes on Forward Recovery among Si, Ge and SiC-Based PiN Diode;2022 International Conference on Innovations in Science, Engineering and Technology (ICISET);2022-02-26

4. Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes;Nanoscale Research Letters;2019-01-31

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3