Author:
Saini Gaurav,Choudhary Sudhanshu
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference33 articles.
1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm;Hisamoto;IEEE Trans. Electron Devices,2000
2. Turning silicon on its edge [double gate CMOS/FinFET technology];Nowak;IEEE Circuits Devices Mag.,2004
3. Intel’s Revolutionary 22nm Transistor Technology. Available Online: http://www.intel.com/content/www/us/en/siliconinnovations/revolutionary-22nm-transistor-technology-presentation.html.
4. Nanowire transistors without junctions;Colinge;Nat. Nanotechnol.,2010
5. Junctionless multigate field-effect transistor;Lee;Appl. Phys. Lett.,2009
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献