Intersubband absorption coefficients of GaN/AlN and strain-compensated InGaN/InAlN quantum well structures
Author:
Funder
MSIP/IITP
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Intersubband optical absorption in a quantum well with an applied electric field
2. Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
3. InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm
4. Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch
5. Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices
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1. The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure;Micro and Nanostructures;2022-04
2. Nonlinear optical properties of morse quantum well modulated by THz laser fields;Physica E: Low-dimensional Systems and Nanostructures;2019-09
3. Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in doubleδ-doped GaAs quantum wells;Physica B: Condensed Matter;2017-11
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