Epitaxial growth of 4H–SiC{0001} and reduction of deep levels
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference24 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Silicon Carbide and Related Materials 1995;Tsvetkov,1996
3. Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence of forward I -V in SiC pin diodes considering stacking faults;physica status solidi (c);2013-09-20
2. The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers;Materials Science Forum;2012-05
3. Lifetime-Killing Defects in 4H-SiC Epilayers and Lifetime Control by Low-Energy Electron Irradiation;Silicon Carbide;2011-03-28
4. Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates;Journal of Applied Physics;2010-09
5. Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation;physica status solidi (b);2008-06-02
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