Effect of active layer thickness on device performance of a-LZTO thin-film transistors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference17 articles.
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1. Amorphous oxide semiconductors: From fundamental properties to practical applications;Current Opinion in Solid State and Materials Science;2023-08
2. Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses;Nanomaterials;2020-03-27
3. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses;Materials;2018-04-05
4. Device characteristics of amorphous ZnSnLiO thin film transistors with various channel layer thicknesses;Applied Physics A;2016-07-22
5. Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness;Superlattices and Microstructures;2015-07
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