Investigation of metal-gate work-function variability in FinFET structures and implications for SRAM cell design-Reference-Cited by-同舟云学术

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Investigation of metal-gate work-function variability in FinFET structures and implications for SRAM cell design

Published:2017-10 Issue: Volume:110 Page:68-81
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rathore Rituraj Singh^ORCID,Rana Ashwani K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. MOSFET performance scaling: limitations and future options;Antoniadis;Electron Dev. Meet. (IEDM),2008

2. MOSFET performance scaling—Part II: future directions;Khakifirooz;IEEE Trans. Electron Dev.,2008

3. Silicon-on-insulator (Soi) Technology: Manufacture and Applications;Kononchuk,2014

4. FinFETs and Other Multi-gate Transistors,2008

5. Turning silicon on its edge [double gate CMOS/FinFET technology];Nowak;IEEE Circ. Dev. Mag.,2004

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