Author:
Liu Dongfeng,Lin Donghua,Huang Guohong,Li Zhizhong,Guo Kangxian
Funder
National Science Foundation of China
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-x N/GaN multi-quantum wells;Liu;Appl. Phys. Lett.,2012
2. Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in as harp-interface AlGaN/GaN heterostructure;Chen;Appl. Phys. Lett.,2015
3. Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector;Dyakonova;J. Appl. Phys.,2016
4. Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors;Saidi;J. Appl. Phys.,2009
5. Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures;Ahmadi;J. Appl. Phys.,2016
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献