Streaming transport of two dimensional electron gas in AlGaN/GaN/AlGaN double heterostructures

Author:

Liu Dongfeng,Lin Donghua,Huang Guohong,Li Zhizhong,Guo Kangxian

Funder

National Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-x N/GaN multi-quantum wells;Liu;Appl. Phys. Lett.,2012

2. Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in as harp-interface AlGaN/GaN heterostructure;Chen;Appl. Phys. Lett.,2015

3. Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector;Dyakonova;J. Appl. Phys.,2016

4. Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors;Saidi;J. Appl. Phys.,2009

5. Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures;Ahmadi;J. Appl. Phys.,2016

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