GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference42 articles.
1. Review and critique of analytic models of MOSFET short-channel effects in subthreshold;Xie;IEEE Trans. Electron. Dev.,2012
2. Universality of short-channel effects in undoped-body silicon nanowire MOSFETs;Bangsaruntip;IEEE Electron. Device Lett.,2010
3. FinFETs and Other Multi-Gate Transistors;Colinge,2008
4. Analog performance investigation of dual electrode based doping-less tunnel FET;Anand;J. Comput. Electron.,2016
5. Assessment of ambipolar behavior of a tunnel FET and influence of structural modifications;Narang;J. Semicond. Technol. Sci.,2012
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