Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
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2. Gamma Ray and Neutron Radiation Effects on the Electrical and Structural Properties of n-ZnO/p-CuGaO2 Schottky Diode;ECS Journal of Solid State Science and Technology;2020-05-14
3. Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes;Journal of Applied Physics;2019-01-21
4. Annealing Dependence on Structural and Electrical Characteristic of n-ZnO/p-CuGaO2 Transparent Heterojunction Diode;Advanced Science Letters;2017-11-01
5. Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP;Indian Journal of Physics;2017-02-21
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