An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET

Published:2013-08 Issue: Volume:60 Page:580-595
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Saramekala G.K.,Santra Abirmoya,Dubey Sarvesh,Jit Satyabrata,Tiwari Pramod Kumar

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Scaling and reliability problems of gigabit CMOS circuits;Krautscheider;Microelectronics Reliability,1997

2. J.D. Plummer, Silicon MOSFETs (conventional and non-traditional) at the scaling limit, in: Proceedings of the 58th Device Research Conference, 2000, pp. 3–6.

3. Modeling the effect of source/drain junction depth on bulk-MOSFETscaling;Murali;Solid-State Electronics,2007

4. M.J. Kumar, A. Chaudhry, Two-dimensional analyticalmodeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs, IEEE Transactions on Electron Devices 51 (2004) 569–574.

5. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Letters,1987

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of switching and inverter characteristics of Recessed-Source/Drain (Re–S/D) Silicon-on-Insulator (SOI) Feedback Field Effect Transistor (FBFET);Microelectronics Journal;2023-08

2. Digital Performance Analysis of Double Gate MOSFET by Incorporating Core Insulator Architecture;Silicon;2022-03-30

3. Design of Low Power Junction‐Less Double‐Gate MOSFET;Design and Development of Efficient Energy Systems;2021-04-15

4. A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance;Journal of Computational Electronics;2020-06-16

5. A review on performance comparison of advanced MOSFET structures below 45 nm technology node;Journal of Semiconductors;2020-06-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3