Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer-Reference-Cited by-同舟云学术

Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer

Published:2017-01 Issue: Volume:101 Page:293-298
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Yang Xian,Sun Huiqing,Fan Xuancong,Zhang Zhuding,Sun Jie,Yi Xinyan,Guo Zhiyou

Funder

Science and Technology Projects of Guangdong Province

Science and Technology Projects of Guangzhou

Special Project for Key Science and Technology of Zhongshan

Huadu District Semiconductor Applications Engineering and Technology Research and Development Centers

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

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3. Hideki Hirayama, Norimichi Noguchi, Tohru Yatabe, and Norihiko Kamata, 227nm AlGaN Light-emitting Diode with 0.15mW Output Power Realized Using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density, 10.1143/APEX.1.051101.

4. 231 – 261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire;Hirayama;Appl. Phys. Lett.,2007

5. Built-in field effect on the electron mobility in Al N∕Ga N∕Al N quantum wells;Pokatilov;Appl. Phys. Lett.,2006

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