Modeling and analysis of sub-surface leakage current in nano-MOSFET under cutoff regime

Author:

Swami Yashu,Rai Sanjeev

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits;Roy;Proc. IEEE,2003

2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's;Lo;IEEE Electron Device Lett.,1997

3. Band-to-band-tunneling leakage suppression for ultra-thin-body GeOI MOSFETs using transistor stacking;Hu;IEEE Electron Devices Lett.,2012

4. MOSFET gate dimension dependent drain and source leakage modeling by standard SPICE models;Panko;Solid-State Electron.,2013

5. Quantum-barriers and ground-plane isolation: a path for scaling bulk-FinFET technologies to the 7 nm-node and beyond;Eneman,2013

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