Performance improvement of AlGaN-based ultraviolet light-emitting diodes by amending inverted-Y-shaped barriers with alternate doped Si and Mg-Reference-Cited by-同舟云学术

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Performance improvement of AlGaN-based ultraviolet light-emitting diodes by amending inverted-Y-shaped barriers with alternate doped Si and Mg

Published:2017-07 Issue: Volume:107 Page:278-284
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Hou Yufei,Guo Zhiyou,Liu Yang,Guo Min,Huang Jing,Yao Shunyu,Zhang Xiu,Gong Xing,Xu Zhihong

Funder

Science and Technology Program Projects of Guangdong Province, China

Science and technology projects of Guangzhou

Key Science and Technology of Zhongshan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008

2. High power AlGaN ultraviolet light emitters;Shatalov;Semicond. Sci. Technol.,2014

3. Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers;Xiong;Appl. Phys. A,2014

4. Performance of high-power AlInGaN light emitting diodes;Kim;Phys. Stat. Sol.,2001

5. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes;Han;Appl. Phys. Lett.,2009

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1. Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer;Optical and Quantum Electronics;2023-11-30

2. Efficiency Droop Free UV-C LED by introducing p-doped LQB and p- n-p-n-p doped AlGaN Hole Injection Layer;2023-08-28

3. Performance of Improvement of AlGaN‐Based Deep UV Light‐Emitting Diode with Two Parts Linearly Graded Barriers;physica status solidi (a);2023-07-02

4. Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer;Journal of Russian Laser Research;2023-07

5. Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers;AIP Advances;2022-02-01

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