Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells

Published:2017-07 Issue: Volume:107 Page:293-298
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhu Yadan,Lu Taiping,Zhou Xiaorun,Zhao Guangzhou,Dong Hailiang,Jia Zhigang,Liu Xuguang,Xu Bingshe

Funder

National Natural Science Foundation of China

Applied Basic Research Projects of Shanxi Province

National Key R&D Program of China

Shanxi Provincial Key Innovative Research Team in Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Recent Progress in GaN-Based Light-Emitting Diodes

2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

3. Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

4. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

5. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

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1. Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies;Computational Materials Science;2023-10

2. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells;Materials;2023-02-13

3. Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells;Nanomaterials;2022-09-08

4. Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure;SPECTROSC SPECT ANAL;2022

5. Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes;Superlattices and Microstructures;2020-09

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