A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications-Reference-Cited by-同舟云学术

A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications

Published:2017-01 Issue: Volume:101 Page:315-322
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Jia Hujun,Luo Yehui,Zhang Hang,Xing Ding,Ma Peimiao

Funder

National Natural Science Foundation of China

National Key Basic Research Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

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3. Physics of Semiconductor Devices;Sze,2008

4. Improved performance of SiC MESFETs using double-recessed structure;Zhu;Microelectron. Eng.,2006

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