A novel stair-stepping buffer-gate 4H-SiC MESFET with multiple recesses in a buffer layer
Author:
Affiliation:
1. College of Automation & Electronic Engineering, Qingdao University of Science & Technology, Qingdao, China
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/00150193.2022.2076451
Reference11 articles.
1. A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications
2. Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs
3. Record gain at 3.1GHz of 4H-SiC high power RF MESFET
4. Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors
5. Improved 4H–SiC MESFET with double source field plate structures
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