Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5 nm DGMOSFET

Author:

Jung Hakkee,Dimitrijev Sima

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. International Technology Roadmap for Semiconductors. http://www.itrs2.net/itrs-reports.html, (2015).

2. Scaling junctionless multigate field-effect transistors by step-doping;Song;Appl. Phys. Lett.,2014

3. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET;Saramekala;Superlattices Microstruct.,2013

4. Graphene field-effect transistors based on boron-nitride dielectrics;Meric;Proc.. IEEE,2013

5. Nanoscale triple-gate FinFET design considerations based on an analytical model of short-channel effects;Xie;Sci. China Inf. Sci.,2014

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