Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications-Reference-Cited by-同舟云学术

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Capacitance modeling of gate material engineered cylindrical/surrounded gate MOSFETs for sensor applications

Published:2015-12 Issue: Volume:88 Page:271-280
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Verma Jay Hind Kumar,Pratap Yogesh,Haldar Subhasis,Gupta R.S.,Gupta Mridula

Funder

CSIR, Govt. of India

University Grant Commission (UGC) Govt. of India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. A new compact sub-threshold behaviour model for dual-material surrounding gate (DMSG) MOSFETs;Chiang;Solid State Electron,2009

2. An analytical solution to a double-gate MOSFET with undoped body;Taur;IEEE Electron. Dev. L,2000

3. An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETs;Perez;IEEE T. Electron. Dev.,2011

4. Modeling of nanoscale Gate All Around MOSFET;Jemeniz;IEEE Electron. Dev. L,2004

5. Investigation of linearity performance and intermodulation distortion of GME CGT MOSFET for RFIC design;Ghosh;IEEE T. Electron. Dev.,2012

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1. A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit;Physica Scripta;2023-11-21

2. 18nm n-channel and p-channel Dopingless Asymmetrical Junctionless DG-MOSFET: Low Power CMOS Based Digital and Memory Applications;Silicon;2021-10-05

3. A review on performance comparison of advanced MOSFET structures below 45 nm technology node;Journal of Semiconductors;2020-06-01

4. Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions;IOP Conference Series: Materials Science and Engineering;2020-06-01

5. 3D Analytical Modeling of Potential, Drain Current, and Threshold Characteristics for Long-Channel Square Gate-All-Around (SGAA) MOSFETs;Recent Advances in Engineering Mathematics and Physics;2020

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