Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions

Abstract

Abstract In this paperan asymmetrical junctionless double-gate MOSFET(AJDG-MOSFET) has been analyzed using different gate oxide material like SiO2 and HfO2 and different gate contact material like aluminium, copper and polysilicon. To check the sensitivity of AJDG-MOSFET, a temperature analysis has been performed at a different temperature ranging 250-400K. The performance of AJDG-MOSFET is analyzed with transfer and output characteristics using 2D/3D simulation on Cogenda TCAD. The device performs better using HfO2 as gate oxide and polysilicon as gate contact. The ideal subthreshold performance (DIBL=65mV/V, SS=68 mV/decade) is observed with a high value of Ion/Ioff(∼1012) for 300K temperature. The analysis for temperature shows a very small variation in OFF current and found suitable for low power applications.