Effect of P+ shielding region on single event burnout of 4H SiC trench gate MOSFET

Author:

Yan-juan Liu,Ying Wang,Cheng-hao Yu,Xin Luo,Fei Cao

Funder

National Natural Science Foundation of China

Youth Foundation of Zhejiang Province of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Status and prospects for SiC power MOSFETs;Cooper;IEEE Trans. Electron. Dev.,2004

2. SiC power devices–present status, applications and future perspective;Östling,2011

3. Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions;Moscatelli;IEEE Trans. Nucl. Sci.,2006

4. Heavy ion-induced damage in SiC Schotttky barrier diode;Kamezawa;Physica B,2006

5. Catatrophic SEE mechanisms and behavior in SiC diodes;Scheick,2006

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of Advanced GaN and SiC Semiconductor Materials: Key Characteristics and Diverse Applications;Highlights in Science, Engineering and Technology;2022-07-07

2. Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics;Materials Research Express;2020-03-01

3. Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening;2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM);2019-08

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